公开(公告)号：US20070019360A1

公开(公告)日：2007-01-25

申请号：US11425006

申请日：2006-06-19

申请人： Cuker Huang ,  Sing Long Lee ,  Yi-Jou Lu ,  Chia-Ling Lee

发明人： Cuker Huang ,  Sing Long Lee ,  Yi-Jou Lu ,  Chia-Ling Lee

IPC分类号： H01L21/683

CPC分类号： H01L21/67069

摘要： The disclosure generally relates to a method for method for plasma etching a substrate in a plasma reactor comprising positioning the substrate on an electrostatic chuck inside the plasma reactor; supplying a DC voltage to the chuck, the DC voltage forming an electrostatic charge buildup on the substrate; plasma etching the substrate; disconnecting the DC voltage to the chuck; and counteracting the electrostatic charge buildup on the substrate by discharging a varying RF signal within the chamber.

摘要翻译： 本发明一般涉及用于等离子体蚀刻等离子体反应器中的衬底的方法的方法，包括将衬底定位在等离子体反应器内的静电吸盘上; 向所述卡盘供应DC电压，所述DC电压在所述基板上形成静电电荷; 等离子体蚀刻基板; 断开直流电压到卡盘; 并通过在室内排放变化的RF信号来抵消衬底上的静电电荷积累。