公开(公告)号：US10180364B2

公开(公告)日：2019-01-15

申请号：US15314969

申请日：2015-08-21

Applicant: DENSO CORPORATION

Inventor： Hiroo Anan ,  Takashi Inoue

IPC: G01L1/20 ,  G01L1/18 ,  G01L5/16

Abstract: A load sensor includes: a substrate; a rib on the substrate; and two vertical transistors. Each vertical transistor includes: a gate electrode, a gate insulation film, and a semiconductor thin film on the side surface of the rib; a bottom electrode layer on a bottom of the substrate, on which the rib is not arranged, with contacting the semiconductor thin film; and a top electrode layer on a top of the rib with contacting the semiconductor thin film. Each vertical transistor flows current between the bottom electrode layer and the top electrode layer when a channel region is provided in the semiconductor thin film. Each straight line along normal line directions of the channel regions in the vertical transistors is arranged on a different side surface of the rib from each other, and has a predetermined angle between the straight lines.