公开(公告)号：US20210301420A1

公开(公告)日：2021-09-30

申请号：US17211962

申请日：2021-03-25

Applicant: DENSO CORPORATION

Inventor： Bahman SOLTANI ,  Kazutoshi SASAYAMA ,  Yasushi HIBI

IPC: C30B29/36 ,  C30B33/02

Abstract: Provided is a production method of a SiC wafer which can increase the yield of a SiC wafer which can be prepared from a produced SiC single crystal ingot and the product yield of a semiconductor chip.
In forming cylindrical column parts from a SiC single crystal ingot, the diameters of the cylindrical column parts are gradually changed. Specifically, the SiC single crystal ingot configured to have a frustoconical shape is made into, instead of cylindrical column parts all having identical diameters, cylindrical column parts whose diameters increase from the upper surface toward the lower surface of the SiC single crystal ingot.