公开(公告)号：US20220278030A1

公开(公告)日：2022-09-01

申请号：US17747629

申请日：2022-05-18

Applicant: DENSO CORPORATION

Inventor： Syunsuke ARAI ,  Masayoshi NISHIHATA ,  Shinji HIRAMITSU ,  Noriyuki KAKIMOTO

IPC: H01L23/495 ,  H01L23/00 ,  H01L25/07

Abstract: A semiconductor device has a joint part in which a first conducting part and a second conducting part are joined by a joint material. The first conducting part has a high wettability region and a low wettability region in a surface opposite to the second conducting part. The low wettability region is adjacent to the high wettability region to define an outer periphery of the high wettability region and has wettability lower than the high wettability region to the joint material. The high wettability region has an overlap region overlapping a formation region of the joint part in the second conducting part in a planar view, and a non-overlap region connected to the overlap region and not overlapping the formation region of the joint part in the second conducting part. The non-overlap region includes a holding region capable of holding the joint material that is surplus for the joint part.