专利检索 ap:("DOO-WON KWON" OR "JONG-RYEOL YOO" OR "CHANG-ROK MOON") AND inv:"DOO-WON KWON" 第 1 页

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发明申请
SEMICONDUCTOR DEVICES, CMOS IMAGE SENSORS, AND METHODS OF MANUFACTURING SAME 审中-公开
标题翻译：半导体器件，CMOS图像传感器及其制造方法

公开(公告)号：US20090315137A1

公开(公告)日：2009-12-24

申请号：US12547046

申请日：2009-08-25

申请人： DOO-WON KWON , JONG-RYEOL YOO , CHANG-ROK MOON

发明人： DOO-WON KWON , JONG-RYEOL YOO , CHANG-ROK MOON

IPC分类号： H01L31/02

CPC分类号： H01L27/14689 , H01L27/1463 , H01L27/14643

摘要： A semiconductor device includes: a trench device isolating region formed in a substrate to define a photodiode active region; a channel stop impurity region formed in the substrate contacting the device isolating region, wherein the channel stop impurity region surrounds a bottom and a sidewall of the device isolating region; and a photodiode formed within the photodiode active region.

摘要翻译： 半导体器件包括：形成在衬底中以限定光电二极管有源区的沟槽器件隔离区; 形成在与所述器件隔离区接触的衬底中的沟道阻挡杂质区，其中所述沟道阻挡杂质区围绕所述器件隔离区的底部和侧壁; 以及形成在光电二极管活性区域内的光电二极管。