公开(公告)号：US20190058445A1

公开(公告)日：2019-02-21

申请号：US16052726

申请日：2018-08-02

Applicant: DSP Group Ltd.

Inventor： Sergey Anderson ,  Nadav Snir

IPC: H03F1/02 ,  H03F3/195 ,  H03F3/60

Abstract: An integrated circuit RF power amplifier that includes a substrate; a low power (LP) amplifier; a high-power (HP) amplifier; and an asymmetrical parallel-combining transformer. The substrate is configured to supports the LP amplifier, the HP amplifier and the asymmetrical parallel-combining transformer. The LP amplifier is configured to amplify a LP RF input signal to provide a LP amplified signal. The HP amplifier is configured to amplify a HP RF input signal to provide a HP amplified signal. The HP amplified signal has maximal intensity that exceeds a maximal intensity of the LP amplified signal. The wherein the asymmetrical parallel-combining transformer may include (a) a HP primary winding that is constructed and arranged to receive the HP amplified signal; (b) LP primary windings that are constructed and arranged to receive the LP amplified signal; and (c) secondary windings that are magnetically coupled to the HP primary winding and to the LP primary windings, and are constructed and arranged to output a output signal.

公开(公告)号：US11700028B2

公开(公告)日：2023-07-11

申请号：US17140301

申请日：2021-01-04

Applicant: DSP Group Ltd.

Inventor： Sergey Anderson ,  Nadav Snir

IPC: H03K17/693 ,  H04B1/44

CPC classification number: H04B1/44 ,  H03K17/693

Abstract: A TX/RX RF switch that may include a reception path; and a transmission path that has an antenna port, a transmission input port, and transmission transistors. The transmission transistors have source-bulk connections. The reception path has an antenna port, a reception output port, and reception transistors. The reception path includes a first reception transistor that is closest to the antenna port, out of the reception transistors, and has a source-bulk connection, and at least one other reception transistor that has a bulk-to-ground connection. The reception transistors and the transmission transistors are CMOS transistors.