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公开(公告)号:US20120141804A1
公开(公告)日:2012-06-07
申请号:US13390027
申请日:2010-07-29
申请人: Daisuke Miyabe , Hiromitsu Seto
发明人: Daisuke Miyabe , Hiromitsu Seto
CPC分类号: C03C3/087 , C03C17/23 , C03C2217/211 , C03C2217/231 , C03C2217/241 , C03C2217/244
摘要: The glass substrate of the present invention includes, in terms of mass %: 58.5-69.5% SiO2, 2.5-9.9% Al2O3, 0-2.5% Li2O, 0%≦Na2O 555° C., liquidus temperature ≦1200° C., and average thermal expansion coefficient ≦75×10−7/° C. The present invention can provide a glass substrate having a thermal expansion coefficient close to those of a semi conductor film, etc. and a high strain point, and suitable for continuous production by a float process.
摘要翻译: 本发明的玻璃基板以质量%计含有:58.5-69.5%的SiO 2,2.5-9.9%的Al 2 O 3,0-2.5%的Li 2 O,0%和1%的Na 2 O,6%,0%和1%的K 2 O,6% ,0%
555℃,液相线温度≦̸ 1200℃,平均热膨胀系数≦̸ 75×10-7 /℃。本发明可以提供一种玻璃基板,其热膨胀系数接近于 半导体膜等,并具有高应变点,适用于通过浮法工艺连续生产。 -
公开(公告)号:US20080090717A1
公开(公告)日:2008-04-17
申请号:US11793171
申请日:2005-12-15
申请人: Yukihito Nagashima , Haruki Niida , Junji Kurachi , Akihiro Koyama , Hiromitsu Seto , Kazuhiro Yamamoto , Daisuke Miyabe , Yutaka Senshu
发明人: Yukihito Nagashima , Haruki Niida , Junji Kurachi , Akihiro Koyama , Hiromitsu Seto , Kazuhiro Yamamoto , Daisuke Miyabe , Yutaka Senshu
IPC分类号: C03C3/11
CPC分类号: C03C3/11 , C03C3/091 , G02F2001/133302
摘要: The present invention provides a glass composition in which a smaller amount of arsenic oxide or antimony oxide that has a heavy burden on the environment is used and fewer bubbles remain. This glass composition includes, in terms of mass %: 40 to 70% of SiO2, 5 to 20% of B2O3, 10 to 25% of Al2O3, 0 to 5% of MgO (up to and not including 5%), 0 to 20% of CaO, 0 to 20% of SrO, 0 to 10% of BaO, 0 to 1.5% of Li2O, 0 to 1.5% of Na2O, 0 to 1.5% of K2O, and 0 to 1.5% of Cl. The sum of the contents of Li2O, Na2O, and K2O is 0.05 to 1.5 mass %, and the content of K2O is equal to or larger than that of Na2O.
摘要翻译: 本发明提供一种玻璃组合物,其中使用较少量的环境负担较重的氧化亚砷或氧化锑,并且保留较少的气泡。 该玻璃组合物以质量%计含有40〜70%的SiO 2,5〜20%的B 2 O 3 3, 10〜25%的Al 2 O 3 3,0〜5%的MgO(不高于5%),0〜20%的CaO,0〜20 0%的BaO,0〜1.5%的Li 2 O,0〜1.5%的Na 2 O,0〜1.5%的K 2, SUB> 2 O,0〜1.5%的Cl。 Li 2 O,Na 2 O和K 2 O 2的含量之和为0.05〜1.5质量%,含量为 K 2 O等于或大于Na 2 O的O 2。
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公开(公告)号:US09156723B2
公开(公告)日:2015-10-13
申请号:US13390027
申请日:2010-07-29
申请人: Daisuke Miyabe , Hiromitsu Seto
发明人: Daisuke Miyabe , Hiromitsu Seto
CPC分类号: C03C3/087 , C03C17/23 , C03C2217/211 , C03C2217/231 , C03C2217/241 , C03C2217/244
摘要: The glass substrate of the present invention includes, in terms of mass %: 58.5-69.5% SiO2, 2.5-9.9% Al2O3, 0-2.5% Li2O, 0%≦Na2O 555° C., liquidus temperature ≦1200° C., and average thermal expansion coefficient ≦75×10−7/° C. The present invention can provide a glass substrate having a thermal expansion coefficient close to those of a semi conductor film, etc. and a high strain point, and suitable for continuous production by a float process.
摘要翻译: 本发明的玻璃基板以质量%计含有:58.5-69.5%的SiO 2,2.5-9.9%的Al 2 O 3,0-2.5%的Li 2 O,0%和1%的Na 2 O,6%,0%和1%的K 2 O,6% ,0%
555℃,液相线温度≦̸ 1200℃,平均热膨胀系数≦̸ 75×10-7 /℃。本发明可以提供一种玻璃基板,其热膨胀系数接近于 半导体膜等,并具有高应变点,适用于通过浮法工艺连续生产。
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