公开(公告)号：US5650337A

公开(公告)日：1997-07-22

申请号：US435371

申请日：1995-05-05

申请人： David Cahen ,  Leonid Chernyak ,  Abram Jakubowicz

发明人： David Cahen ,  Leonid Chernyak ,  Abram Jakubowicz

IPC分类号： H01L21/8256 ,  H01L21/26

CPC分类号： H01L21/8256

摘要： The invention related to a process for the production of a monolithic electronic and/or optoelectronic single-element or multi-element structure from a semionic material selected from the group of semionic materials comprising doped elemental semiconductors and doped binary, ternary or multinary chalcogenide or pnictide semiconductors, said process comprising: (a) establishing a location in a semionic body; (b) applying an electric field to said location in said semionic body; (c) maintaining said semionic body including said location at a temperature sufficiently low to preclude melting or decomposition of the semionic body while said electric field is being applied; and (d) controlling the electric field as to magnitude and time so that no decomposition and macroscopic melting of the material occurs while creating doping profiles sufficiently sharp to define at least one homojunction and thus create an electronic or optoelectronic device element in the semionic material in said location thereof. The invention further relates to the monolithic electronic and/or optoelectric structures produced by said process.

摘要翻译： 本发明涉及从选自包含掺杂元素半导体和掺杂二元，三元或多元硫属元素或杂质的半原子材料的组的半模材料制备单片电子和/或光电单元件或多元件结构的方法 所述方法包括：（a）在半离子体中建立位置; （b）向所述半模体内的所述位置施加电场; （c）将包括所述位置的所述阴离子体在足够低的温度下保持，以防止在施加所述电场时所述半体的熔化或分解; 并且（d）控制电场的幅度和时间，使得材料不会发生分解和宏观熔化，同时产生足够锐度的掺杂分布，以限定至少一个同态结，从而在半导体材料中产生电子或光电器件元件 其位置。 本发明还涉及由所述方法生产的单片电子和/或光电结构。

公开(公告)号：US06674064B1

公开(公告)日：2004-01-06

申请号：US10192279

申请日：2002-07-10

申请人： Leonid Chernyak ,  Alfons Schulte

发明人： Leonid Chernyak ,  Alfons Schulte

IPC分类号： H01J4014

CPC分类号： H01L31/02002

摘要： The subject of this invention are method and system for enhancing performance characteristics (quantum efficiency, photoresponse, and spectral range) in photon detectors and solar cells (both of which are referred to as photon devices). The photon detectors are p-n junctions and/or Schottky barrier diodes. The solar cells are p-n junctions. The method and system can include injecting electrons into a p-region of a photon detector or solar cell over a selected time period of up to approximately 1500 seconds to control and improve minority carrier transport, in particular a diffusion length. The injection of electrons can occur periodically over several days and can occur under a o forward bias of the p-n junction or Schottky barrier. Improvements in quantum efficiency can be between approximately 2 to approximately 5 fold. The performance output of the device can be automatically sensed with computer type logic circuits, to actively control in real time the electron injection and to maximize performance results.

摘要翻译： 本发明的主题是用于增强光子检测器和太阳能电池（两者都称为光子器件）中的性能特性（量子效率，光响应和光谱范围）的方法和系统。 光子检测器是p-n结和/或肖特基势垒二极管。 太阳能电池是p-n结。 该方法和系统可以包括在高达大约1500秒的选定时间段内将电子注入到光子检测器或太阳能电池的p区中，以控制和改善少数载流子传输，特别是扩散长度。 电子注入可以在几天内周期性地发生，并且可以在p-n结或肖特基势垒的正向偏压下发生。 量子效率的改善可以在大约2到大约5倍之间。 可以用计算机类型逻辑电路自动检测器件的性能输出，实时主动控制电子注入并最大限度地提高性能。