公开(公告)号：US20120326116A1

公开(公告)日：2012-12-27

申请号：US13504734

申请日：2010-11-30

申请人： David Julian Peter Ellis ,  Anthony John Bennett ,  Andrew James Shields

发明人： David Julian Peter Ellis ,  Anthony John Bennett ,  Andrew James Shields

IPC分类号： H01L33/04 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： G02B6/13 ,  B82Y10/00 ,  B82Y20/00 ,  G02B2006/12078 ,  H01L29/127 ,  H01S5/3412

摘要： A semiconductor structure with a waveguide, the semiconductor structure has a plurality of layers, at least one of which being partially laterally oxidised, said laterally oxidised material modifying the lateral effective refractive index with said structure in order to form a waveguide within the structure, the structure also has a quantum dot, said quantum dot being configured to emit photons into said waveguide, the waveguide being configured such that it guides the output from a single quantum dot.

摘要翻译： 具有波导的半导体结构，所述半导体结构具有多个层，其中至少一个部分地被侧向氧化，所述横向氧化的材料用所述结构改变横向有效折射率，以在该结构内形成波导， 结构还具有量子点，所述量子点被配置为将光子发射到所述波导中，所述波导被配置为使得其引导来自单个量子点的输出。