公开(公告)号：US07181811B1

公开(公告)日：2007-02-27

申请号：US09601540

申请日：1999-02-11

申请人： David Tomanek ,  Richard Enbody ,  Young-Kyun Kwon

发明人： David Tomanek ,  Richard Enbody ,  Young-Kyun Kwon

IPC分类号： A44B18/00

CPC分类号： A44B18/0003 ,  Y10S977/724 ,  Y10S977/882 ,  Y10T24/27 ,  Y10T24/2775 ,  Y10T24/2792 ,  Y10T156/1089 ,  Y10T428/24008 ,  Y10T428/24017 ,  Y10T428/24174 ,  Y10T428/24182

摘要： This application relates to a micro-fastening system and, more particularly, to a mechanical micro-fastening system employing a plurality of mating nanoscale fastening elements (16, 18) and a method of manufacturing a micro-fastening system. The mating nanoscale fastening elements (16, 18) are formed by functionalizing nanotubes having an ordered array of hexagons with pentagons and heptagons at particular heterojunctions.

摘要翻译： 本申请涉及一种微型紧固系统，更具体地，涉及一种采用多个配合的纳米级紧固件（16,18）的机械微型紧固系统和一种制造微型紧固系统的方法。 配合的纳米级紧固元件（16,18）通过在具有特殊异质结的五边形和七边形上具有六边形有序排列的纳米管来形成。

公开(公告)号：US06473351B2

公开(公告)日：2002-10-29

申请号：US09927086

申请日：2001-08-09

申请人： David Tomanek ,  Richard Enbody ,  Kwon Young-Kyun ,  Mark W. Brehob

发明人： David Tomanek ,  Richard Enbody ,  Kwon Young-Kyun ,  Mark W. Brehob

IPC分类号： G11C700

CPC分类号： G11C13/025 ,  B82Y10/00 ,  B82Y15/00 ,  G11B9/14 ,  G11B9/1409 ,  G11B9/1418 ,  G11B9/1472 ,  G11B9/149 ,  G11C11/34 ,  G11C11/56 ,  G11C13/04 ,  G11C2213/16 ,  G11C2213/19 ,  G11C2213/77 ,  Y10S977/943 ,  Y10S977/947

摘要： Nanomechanisms are employed in nanomemory elements which, in turn, are employable in nanoscale memory devices. A nanoscale particle is enclosed within a nonocapsule to create a bistable device which is both readable and writable in a variety of ways. A nonamechanism for use in a nanoscale memory element includes a first element in the form of a nanoassembly having a cavity and second element in the form of a nanostructure which is removeably disposed within the cavity. In one embodiment, the nanoassembly is demonstrated as a C480 capsule and the nanostructure is demonstrated as a charged hd 60 fullerene molecule. The nanoscale memory devices combine high switching speed, high packing density and stability with non0volatility of the stored data.

摘要翻译： 纳米力学用于纳米元件，其又可用于纳米级存储器件。 将纳米级粒子封装在非包层内以形成双稳态装置，其可以以各种方式读取和写入。 用于纳米尺度记忆元件的非机械装置包括纳米组件形式的第一元件，其具有空腔和纳米结构形式的第二元件，其可移除地设置在腔内。 在一个实施方案中，纳米组合被证明为C480胶囊，并且纳米结构被证明为带电荷的富勒烯分子。 纳米级存储器件结合了高开关速度，高封装密度和稳定性与存储数据的非易失性。