公开(公告)号：US20110233728A1

公开(公告)日：2011-09-29

申请号：US13156037

申请日：2011-06-08

Applicant: Davide CHIOLA ,  Carsten SCHAEFFER

Inventor： Davide CHIOLA ,  Carsten SCHAEFFER

IPC: H01L29/06

CPC classification number: H01L29/7397 ,  H01L29/0623 ,  H01L29/0834 ,  H01L29/66348

Abstract: A method for producing a semiconductor component is proposed. The method includes providing a semiconductor body having a first surface; forming a mask on the first surface, wherein the mask has openings for defining respective positions of trenches; producing the trenches in the semiconductor body using the mask, wherein mesa structures remain between adjacent trenches; introducing a first dopant of a first conduction type using the mask into the bottoms of the trenches; carrying out a first thermal step; introducing a second dopant of a second conduction type, which is complementary to the first conduction type, at least into the bottoms of the trenches; and carrying out a second thermal step.

Abstract translation: 提出了半导体元件的制造方法。 该方法包括提供具有第一表面的半导体本体; 在所述第一表面上形成掩模，其中所述掩模具有用于限定沟槽的相应位置的开口; 使用掩模在半导体本体中产生沟槽，其中台面结构保留在相邻的沟槽之间; 使用掩模将第一导电类型的第一掺杂剂引入沟槽的底部; 进行第一热步骤; 将与第一导电类型互补的第二导电类型的第二掺杂剂至少引入到沟槽的底部; 并进行第二热步骤。