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公开(公告)号:US20030147449A1
公开(公告)日:2003-08-07
申请号:US10065447
申请日:2002-10-18
Applicant: Delphi Technologies, Inc.
Inventor: Abhijeet V. Chavan , James H. Logsdon , Dan W. Chilcott , Han-Sheng Lee , David K. Lambert , Timothy A. Vas
IPC: G01K007/00 , G01K003/00
Abstract: An integrated sensor comprising a thermopile transducer and signal processing circuitry that are combined on a single semiconductor substrate, such that the transducer output signal is sampled in close vicinity by the processing circuitry. The sensor comprises a frame formed of a semiconductor material that is not heavily doped, and with which a diaphragm is supported. The diaphragm has a first surface for receiving thermal (e.g., infrared) radiation, and comprises multiple layers that include a sensing layer containing at least a pair of interlaced thermopiles. Each thermopile comprises a sequence of thermocouples, each thermocouple comprising dissimilar electrically-resistive materials that define hot junctions located on the diaphragm and cold junctions located on the frame. The signal processing circuitry is located on the frame and electrically interconnected with the thermopiles. The thermopiles are interlaced so that the output of one of the thermopiles increases with increasing temperature difference between the hot and cold junctions thereof, while the output of the second thermopile decreases with increasing temperature difference between its hot and cold junctions.
Abstract translation: 一种集成传感器,包括组合在单个半导体衬底上的热电堆换能器和信号处理电路,使得换能器输出信号在处理电路附近被采样。 传感器包括由不重掺杂的半导体材料形成的框架,并且隔膜支撑在该框架上。 隔膜具有用于接收热(例如,红外)辐射的第一表面,并且包括多层,其包括含有至少一对隔行热电堆的感测层。 每个热电堆包括一系列热电偶,每个热电偶包括不同的电阻材料,其限定位于隔膜上的热接点和位于框架上的冷接头。 信号处理电路位于框架上并与热电堆电互连。 热电堆交织使得其中一个热电堆的输出随着其热连接点和冷连接点之间温度差的增加而增加,而第二热电堆的输出随着其热连接点与冷连接点之间温度差的增加而降低。