公开(公告)号：US20090135640A1

公开(公告)日：2009-05-28

申请号：US11946450

申请日：2007-11-28

申请人： Deok-Kee Kim ,  Chuck Thuc Le ,  Byeongju Park

发明人： Deok-Kee Kim ,  Chuck Thuc Le ,  Byeongju Park

IPC分类号： G11C17/16

CPC分类号： G11C17/16

摘要： An electromigration-programmable semiconductor device may be programmed to increase the resistance or to decrease the resistance by selecting the amount of current passed through the electromigration-programmable semiconductor device. The electromigration-programmable semiconductor device comprises an anode, a cathode, and a link, each having a semiconductor portion and a metal semiconductor alloy portion. The metal semiconductor alloy portion of the link comprises two disjoined sub-portions with a gap therebetween. A low programming current fills the gap by electromigrating a small amount of metal semiconductor alloy from the cathode, A high programming current forms a large metal-semiconductor-alloy-deleted area in the cathode to increase the resistance. A tri-state programming is achieved by selecting the programming current level.

摘要翻译： 可以编程电迁移可编程半导体器件以通过选择通过电迁移可编程半导体器件的电流量来增加电阻或降低电阻。 电迁移可编程半导体器件包括阳极，阴极和链路，每个具有半导体部分和金属半导体合金部分。 连接件的金属半导体合金部分包括两个在它们之间具有间隙的分离的子部分。 低编程电流通过从阴极电解少量金属半导体合金来填充间隙。高编程电流在阴极中形成大的金属 - 半导体 - 合金缺失区域以增加电阻。 通过选择编程电流电平实现三态编程。