公开(公告)号：US08581347B2

公开(公告)日：2013-11-12

申请号：US12841275

申请日：2010-07-22

申请人： Der-Chyang Yeh ,  Li-Weng Chang ,  Hua-Chou Tseng ,  Chih-Ping Chao

发明人： Der-Chyang Yeh ,  Li-Weng Chang ,  Hua-Chou Tseng ,  Chih-Ping Chao

IPC分类号： H01L29/66

CPC分类号： H01L21/8249 ,  H01L21/8228 ,  H01L27/0623 ,  H01L27/0826

摘要： Provided is a semiconductor device that includes a first transistor and a second transistor that are formed on the same substrate. The first transistor includes a first collector, a first base, and a first emitter. The first collector includes a first doped well disposed in the substrate. The first base includes a first doped layer disposed above the substrate and over the first doped well. The first emitter includes a doped element disposed over a portion of the first doped layer. The second transistor includes a second collector, a second base, and a second emitter. The second collector includes a doped portion of the substrate. The second base includes a second doped well disposed in the substrate and over the doped portion of the substrate. The second emitter includes a second doped layer disposed above the substrate and over the second doped well.

摘要翻译： 提供了一种半导体器件，其包括形成在同一衬底上的第一晶体管和第二晶体管。 第一晶体管包括第一集电极，第一基极和第一发射极。 第一集电器包括设置在衬底中的第一掺杂阱。 第一基底包括设置在衬底上方和第一掺杂阱上方的第一掺杂层。 第一发射器包括设置在第一掺杂层的一部分上的掺杂元件。 第二晶体管包括第二集电极，第二基极和第二发射极。 第二集电体包括衬底的掺杂部分。 第二基底包括设置在衬底中并在衬底的掺杂部分上方的第二掺杂阱。 第二发射器包括设置在衬底上方和第二掺杂阱上方的第二掺杂层。

公开(公告)号：US20120018811A1

公开(公告)日：2012-01-26

申请号：US12841275

申请日：2010-07-22

申请人： Der-Chyang Yeh ,  Li-Weng Chang ,  Hua-Chou Tseng ,  Chih-Ping Chao

发明人： Der-Chyang Yeh ,  Li-Weng Chang ,  Hua-Chou Tseng ,  Chih-Ping Chao

IPC分类号： H01L27/06 ,  H01L21/8249

CPC分类号： H01L21/8249 ,  H01L21/8228 ,  H01L27/0623 ,  H01L27/0826

摘要： Provided is a semiconductor device that includes a first transistor and a second transistor that are formed on the same substrate. The first transistor includes a first collector, a first base, and a first emitter. The first collector includes a first doped well disposed in the substrate. The first base includes a first doped layer disposed above the substrate and over the first doped well. The first emitter includes a doped element disposed over a portion of the first doped layer. The second transistor includes a second collector, a second base, and a second emitter. The second collector includes a doped portion of the substrate. The second base includes a second doped well disposed in the substrate and over the doped portion of the substrate. The second emitter includes a second doped layer disposed above the substrate and over the second doped well.

摘要翻译： 提供了一种半导体器件，其包括形成在同一衬底上的第一晶体管和第二晶体管。 第一晶体管包括第一集电极，第一基极和第一发射极。 第一集电器包括设置在衬底中的第一掺杂阱。 第一基底包括设置在衬底上方和第一掺杂阱上方的第一掺杂层。 第一发射器包括设置在第一掺杂层的一部分上的掺杂元件。 第二晶体管包括第二集电极，第二基极和第二发射极。 第二集电体包括衬底的掺杂部分。 第二基底包括设置在衬底中并在衬底的掺杂部分上方的第二掺杂阱。 第二发射器包括设置在衬底上方和第二掺杂阱上方的第二掺杂层。