公开(公告)号：US07079407B1

公开(公告)日：2006-07-18

申请号：US10273684

申请日：2002-10-18

Applicant: Dimitrios Dimitrelis

Inventor： Dimitrios Dimitrelis

IPC: G11C15/00

CPC classification number: G11C15/04

Abstract: A content addressable memory (CAM) device that includes a plurality of CAM cells coupled to a match line to affect a voltage of the match line in response to data values of the CAM cells and comparand data being in a predetermined logical relationship, and a match detect circuit coupled to the match line and adapted to differentially compare the voltage of the match line with a fixed reference voltage and, in response, generate an output signal having two or more logical states corresponding to the states of the predetermined logical relationship between the data value and the comparand data.

Abstract translation: 一种内容可寻址存储器（CAM）装置，其包括耦合到匹配线的多个CAM单元，以响应于所述CAM单元的数据值和比较数据处于预定逻辑关系而影响所述匹配线的电压，并且匹配 检测电路耦合到匹配线并且适于将匹配线的电压与固定参考电压差分比较，并且作为响应，生成具有与数据之间的预定逻辑关系的状态相对应的两个或更多个逻辑状态的输出信号 值和比较数据。

公开(公告)号：US5405488A

公开(公告)日：1995-04-11

申请号：US120619

申请日：1993-09-13

Applicant: Dimitrios Dimitrelis ,  Calvin T. Gabriel ,  Samuel V. Dunton

Inventor： Dimitrios Dimitrelis ,  Calvin T. Gabriel ,  Samuel V. Dunton

IPC: H01J37/32 ,  H01L21/306

CPC classification number: H01J37/32935 ,  H01J37/32963

Abstract: A plasma etching endpoint detection system monitors two optical wavelengths during etching of a non-opaque dielectric film. A controller coupled to the optical monitoring equipment generates an endpoint detection signal corresponding to a predefined mathematical combination of the monitored intensity of light at the first wavelength and the monitored intensity of light at the second wavelength. When the endpoint detection signal crosses a threshold level, the etching of the dielectric layer is stopped. In a preferred embodiment the two monitored wavelengths differ by approximately a factor of two. More generally, the two monitored wavelengths are selected such that the combined intensity signal has a proportionally smaller false endpoint peak than either of the individual monitored intensity signals. The present invention is beneficial primarily for plasma etching systems in which the optical path of the optical monitoring equipment is not parallel to the surface of wafer being etched, which results in a premature or false endpoint signal produced by alternating constructive and destructive interference between reflected and refracted light.

Abstract translation: 等离子体蚀刻终点检测系统在蚀刻非不透明电介质膜期间监测两个光学波长。 耦合到光学监测设备的控制器产生对应于在第一波长处监测的光强度和第二波长的被监视光强度的预定数学组合的端点检测信号。 当端点检测信号跨越阈值电平时，电介质层的蚀刻停止。 在优选实施例中，两个被监测的波长相差大约二分之一。 更一般地，选择两个被监测的波长，使得组合强度信号具有比任一个监视的强度信号成比例地较小的假端点峰值。 本发明主要用于等离子体蚀刻系统，其中光学监测设备的光路不平行于被蚀刻的晶片的表面，这导致由反射和/或反射之间的交替的建构性和相消干涉产生的过早或错误的端点信号 折射光