公开(公告)号：US08723290B2

公开(公告)日：2014-05-13

申请号：US13471508

申请日：2012-05-15

申请人： Dong-suk Shin ,  Andrew-Tae Kim ,  Hong-jae Shin

发明人： Dong-suk Shin ,  Andrew-Tae Kim ,  Hong-jae Shin

IPC分类号： H01L23/525 ,  H01L27/112

CPC分类号： H01L23/5256 ,  H01L23/5258 ,  H01L27/112 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention relates generally to a fuse device of a semiconductor device, and more particularly, to an electrical fuse device of a semiconductor device. Embodiments of the invention provide a fuse device that is capable of reducing programming error caused by non-uniform current densities in a fuse link. In one respect, there is provided an electrical fuse device that includes: an anode; a fuse link coupled to the anode on a first side of the fuse link; a cathode coupled to the fuse link on a second side of the fuse link; a first cathode contact coupled to the cathode; and a first anode contact coupled to the anode, at least one of the first cathode contact and the first anode contact being disposed across a virtual extending surface of the fuse link.

摘要翻译： 本发明一般涉及半导体器件的熔丝器件，更具体地，涉及一种半导体器件的电熔丝器件。 本发明的实施例提供一种能够减少由熔丝链中的不均匀电流密度引起的编程误差的熔丝装置。 在一方面，提供一种电熔丝装置，其包括：阳极; 熔丝链路，其在所述熔丝连接件的第一侧上耦合到所述阳极; 连接到所述熔丝链的第二侧上的所述熔断体的阴极; 耦合到阴极的第一阴极接触; 以及耦合到所述阳极的第一阳极触点，所述第一阴极触点和所述第一阳极触点中的至少一个跨越所述熔断体的虚拟延伸表面设置。

公开(公告)号：US08198702B2

公开(公告)日：2012-06-12

申请号：US13193637

申请日：2011-07-29

申请人： Dong-suk Shin ,  Andrew-Tae Kim ,  Hong-jae Shin

发明人： Dong-suk Shin ,  Andrew-Tae Kim ,  Hong-jae Shin

IPC分类号： H01L23/525

CPC分类号： H01L23/5256 ,  H01L23/5258 ,  H01L27/112 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention relates generally to a fuse device of a semiconductor device, and more particularly, to an electrical fuse device of a semiconductor device. Embodiments of the invention provide a fuse device that is capable of reducing programming error caused by non-uniform current densities in a fuse link. In one respect, there is provided an electrical fuse device that includes: an anode; a fuse link coupled to the anode on a first side of the fuse link; a cathode coupled to the fuse link on a second side of the fuse link; a first cathode contact coupled to the cathode; and a first anode contact coupled to the anode, at least one of the first cathode contact and the first anode contact being disposed across a virtual extending surface of the fuse link.

摘要翻译： 本发明一般涉及半导体器件的熔丝器件，更具体地，涉及一种半导体器件的电熔丝器件。 本发明的实施例提供一种能够减少由熔丝链中的不均匀电流密度引起的编程误差的熔丝装置。 在一方面，提供一种电熔丝装置，其包括：阳极; 熔丝链路，其在所述熔丝连接件的第一侧上耦合到所述阳极; 连接到所述熔丝链的第二侧上的所述熔断体的阴极; 耦合到阴极的第一阴极接触; 以及耦合到所述阳极的第一阳极触点，所述第一阴极触点和所述第一阳极触点中的至少一个跨越所述熔断体的虚拟延伸表面设置。