公开(公告)号：US09291687B2

公开(公告)日：2016-03-22

申请号：US14799070

申请日：2015-07-14

Applicant: Everspin Technologies, Inc.

Inventor： Bradley Engel ,  Phillip Mather

IPC: G01R33/09 ,  G01R33/00 ,  B82Y25/00

CPC classification number: G01R33/098 ,  B82Y25/00 ,  G01R33/0023 ,  G01R33/09 ,  G01R33/093

Abstract: A semiconductor process and apparatus provide a high-performance magnetic field sensor with three differential sensor configurations which require only two distinct pinning axes, where each differential sensor is formed from a Wheatstone bridge structure with four unshielded magnetic tunnel junction sensor arrays, each of which includes a magnetic field pulse generator for selectively applying a field pulse to stabilize or restore the easy axis magnetization of the sense layers to orient the magnetization in the correct configuration. prior to measurements of small magnetic fields. The field pulse is sequentially applied to groups of the sense layers of the Wheatstone bridge structures, thereby allowing for a higher current pulse or larger sensor array size for maximal signal to noise ratio.

公开(公告)号：US09110123B2

公开(公告)日：2015-08-18

申请号：US14532857

申请日：2014-11-04

Applicant: EVERSPIN TECHNOLOGIES, INC.

Inventor： Bradley Engel ,  Phillip Mather

IPC: G01R33/02 ,  G01R33/09 ,  B82Y25/00

CPC classification number: G01R33/098 ,  B82Y25/00 ,  G01R33/0023 ,  G01R33/09 ,  G01R33/093

Abstract: A semiconductor process and apparatus provide a high-performance magnetic field sensor with three differential sensor configurations which require only two distinct pinning axes, where each differential sensor is formed from a Wheatstone bridge structure with four unshielded magnetic tunnel junction sensor arrays, each of which includes a magnetic field pulse generator for selectively applying a field pulse to stabilize or restore the easy axis magnetization of the sense layers to orient the magnetization in the correct configuration. prior to measurements of small magnetic fields. The field pulse is sequentially applied to groups of the sense layers of the Wheatstone bridge structures, thereby allowing for a higher current pulse or larger sensor array size for maximal signal to noise ratio.

Abstract translation: 半导体工艺和设备提供具有三个差分传感器配置的高性能磁场传感器，其仅需要两个不同的钉扎轴，其中每个差分传感器由具有四个非屏蔽磁隧道结传感器阵列的惠斯登电桥结构形成，每个包括 磁场脉冲发生器，用于选择性地施加场脉冲以稳定或恢复感测层的容易轴磁化，以使磁化在正确配置中定向。 在测量小磁场之前。 场脉冲顺序地施加到惠斯登电桥结构的感测层的组，从而允许更高的电流脉冲或更大的传感器阵列尺寸以获得最大的信噪比。