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公开(公告)号：US11309446B2
公开(公告)日：2022-04-19
申请号：US16434685
申请日：2019-06-07
Inventor： William Jo , Hye Jin Jin
IPC: H01L31/06 , H01L29/24 , H01L31/032 , H01L31/09
Abstract: The present disclosure relates to a resistive switching element in which polarization of a ferroelectric material layer and electron-hole separation phenomenon of a two dimensional semiconducting material layer are combined to induce resistive switching phenomenon, and a photovoltaic device such as a solar cell, including the resistive switching element.
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