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公开(公告)号:US20180288910A1
公开(公告)日:2018-10-04
申请号:US15944445
申请日:2018-04-03
Inventor: Sang Wook LEE , Dong Hoon SHIN
IPC: H05K13/00 , H01L21/683
Abstract: A method of manufacturing an electronic device is provided to realize efficient large-scale transferring. The method includes locating a transfer film over a plurality of functional layers separated from each other over a source substrate; attaching a support frame to the transfer film, the support frame having a plurality of holes spaced apart from each other; removing the source substrate from the transfer film, with the plurality of functional layers being in close contact with a bottom surface of the transfer film; locating the transfer film over a target substrate, with the plurality of functional layers being in close contact with the bottom surface of the transfer film; detaching the support frame from the transfer film; and removing the transfer film from the target substrate.
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2.
公开(公告)号:US20200321528A1
公开(公告)日:2020-10-08
申请号:US16304061
申请日:2018-03-09
Inventor: Sang Wook LEE , Dong Hoon SHIN
IPC: H01L51/00 , C01B32/194 , H01L21/322
Abstract: Provided are a method for manufacturing an electronic device capable of efficiently utilizing a material and a method for removing impurities using the same. The method for manufacturing an electronic device comprises the steps of: placing a transfer film on a plurality of functional layers which are positioned apart from each other on a source substrate; bringing a first transfer target into close contact with the lower surface of the transfer film by applying pressure to a portion of the transfer film that corresponds to the first transfer target from among the plurality of functional layers by using a probe; separating the transfer film from the source substrate in a state in which the first transfer target is in close contact with the lower surface; placing the transfer film on a target substrate in the state in which the first transfer target is in close contact with the lower surface; placing the first transfer target on the target substrate by applying pressure to a portion of the transfer film that corresponds to the first transfer target; and separating the transfer film from the target substrate in a state in which the first transfer target is positioned on the target surface.
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