OPC based illumination optimization with mask error constraints
    1.
    发明申请
    OPC based illumination optimization with mask error constraints 有权
    基于OPC的照明优化与掩模误差约束

    公开(公告)号:US20050196681A1

    公开(公告)日:2005-09-08

    申请号:US10794683

    申请日:2004-03-05

    IPC分类号: G03F9/00 G06F17/50

    摘要: A method and system of optimizing the illumination of a mask in a photolithography process. A specific, preferred method includes the steps of: loading minimum design rules of a layout, loading exposure latitude constraints, loading mask error constraints, loading initial illumination conditions, simulating current illumination conditions, obtaining dose-to-print threshold from the minimum design rules (i.e., lines-and-space feature), applying OPC on the layout using the dose-to-print threshold, calculating DOF using the exposure latitude and mask error constraints, changing the illumination conditions in order to attempt to maximize common DOF with the exposure latitude and mask error constraints, and continuing the process until maximum common DOF is obtained.

    摘要翻译: 一种在光刻工艺中优化掩模照明的方法和系统。 具体的,优选的方法包括以下步骤:加载布局的最小设计规则,加载曝光宽容约束,加载掩码误差约束,加载初始照明条件,模拟当前照明条件,从最小设计规则获得剂量到打印阈值 (即线和空间特征),使用剂量到打印阈值在布局上应用OPC,使用曝光宽容度和掩模误差约束计算DOF,改变照明条件,以便尝试最大化常见DOF 曝光宽容度和掩模误差约束,并持续该过程,直到获得最大共同DOF。

    Process and apparatus for generating a strong phase shift optical pattern for use in an optical direct write lithography process
    2.
    发明申请
    Process and apparatus for generating a strong phase shift optical pattern for use in an optical direct write lithography process 有权
    用于产生用于光学直写光刻工艺的强相移光学图案的工艺和装置

    公开(公告)号:US20050153246A1

    公开(公告)日:2005-07-14

    申请号:US10993603

    申请日:2004-11-19

    IPC分类号: G03F7/00 G03F7/20

    CPC分类号: G03F7/70291

    摘要: The present invention provides methods and apparatus for accomplishing a strong phase shift direct write lithography process using reconfigurable optical mirrors. A maskless lithography system is provided. The maskless direct-write lithography system provided uses an array of mirrors configured to operate in a tilting mode, a piston-displacement mode, or both in combination. The controlled mirror array is used to generate strong phase shift optical patterns which are directed onto a photoimageable layer of a substrate in order to facilitate pattern transfer. In order to avoid constraining the system to forming edges of patterns aligned with the array of mirrors, gray-scale techniques are used for subpixel feature placement.

    摘要翻译: 本发明提供了使用可重构光学镜完成强相移直写式光刻工艺的方法和装置。 提供无掩模光刻系统。 所提供的无掩模直写光刻系统使用配置成以倾斜模式,活塞位移模式或两者组合地操作的反射镜阵列。 受控反射镜阵列用于产生强相移光学图案,其被引导到基板的可光成像层以便于图案转印。 为了避免将系统约束以形成与反射镜阵列对准的图案的边缘,使用灰度技术用于子像素特征放置。