公开(公告)号：US20150179842A1

公开(公告)日：2015-06-25

申请号：US14307856

申请日：2014-06-18

Applicant: Electronics and Telecommunications Research Institute

Inventor： Jeong Woo PARK ,  Sang Pil HAN ,  Dae Yong KIM ,  Hyun Sung KO ,  Nam Je KIM ,  Ki Won MOON ,  Il Min LEE ,  Eui Su LEE ,  Kyung Hyun PARK

IPC: H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/11 ,  H01L31/10

Abstract: Disclosed is a rectifier capable of performing a high speed rectifying operation, and includes: a first semiconductor layer; a second semiconductor layer; and a third semiconductor layer, in which the first semiconductor layer and the third semiconductor layer are formed of semiconductor layers having the same type, and the second semiconductor layer is formed between the first semiconductor layer and the third semiconductor layer, is formed of a semiconductor layer having a different type from that of the first semiconductor layer and the third semiconductor layer, and is formed in graded doped state.

Abstract translation: 公开了一种能够执行高速整流操作的整流器，包括：第一半导体层; 第二半导体层; 以及第三半导体层，其中第一半导体层和第三半导体层由具有相同类型的半导体层形成，并且第二半导体层形成在第一半导体层和第三半导体层之间，由半导体 层与第一半导体层和第三半导体层的类型不同，并且以渐变掺杂状态形成。