公开(公告)号：US20150191358A1

公开(公告)日：2015-07-09

申请号：US14314153

申请日：2014-06-25

Applicant: Electronics and Telecommunications Research Institute

Inventor： Jin Sik CHOI ,  Hong Kyw CHOI ,  Ki Chul KIM ,  Young Jun YU ,  Jin Soo KIM ,  Choon Gi CHOI

IPC: C01B31/04

CPC classification number: C01B31/0453 ,  C01B32/186 ,  H01L21/0425 ,  Y10T428/24802 ,  Y10T428/24851

Abstract: Disclosed are a method of growing a high-quality single layer graphene by using a Cu/Ni multi-layer metallic catalyst, and a graphene device using the same. The method controls and grows a high-quality single layer graphene by using the Cu/Ni multilayer metallic catalyst, in which a thickness of a nickel lower layer is fixed and a thickness of a copper upper layer is changed in a case where a graphene is grown by a CVD method. According to the method, it is possible to obtain a high-quality single layer graphene, and improve performance of a graphene application device by utilizing the high-quality single layer graphene and thus highly contribute to industrialization of the graphene application device.

Abstract translation: 公开了通过使用Cu / Ni多层金属催化剂生长高质量单层石墨烯的方法和使用其的石墨烯装置。 该方法通过使用Cu / Ni多层金属催化剂来控制和生长高质量的单层石墨烯，其中在下列情况下，固定有镍下层的厚度和铜上层的厚度，在石墨烯为 通过CVD法生长。 根据该方法，可以通过利用高品质的单层石墨烯来获得高品质的单层石墨烯，并提高石墨烯应用装置的性能，从而对石墨烯施加装置的工业化起到非常重要的作用。