公开(公告)号：US10403601B2

公开(公告)日：2019-09-03

申请号：US15623580

申请日：2017-06-15

申请人： FAIRCHILD SEMICONDUCTOR CORPORATION

发明人： Seungwon Im ,  Oseob Jeon ,  JoonSeo Son ,  Mankyo Jong ,  Olaf Zschieschang

IPC分类号： H01L25/065 ,  H01L23/373 ,  H01L21/56 ,  H01L23/538 ,  H01L25/07 ,  H01L23/31 ,  H01L23/00

摘要： Implementations of semiconductor packages may include: a first substrate having a first dielectric layer coupled between a first metal layer and a second metal layer; a second substrate having a second dielectric layer coupled between a third metal layer and a fourth metal layer. A first die may be coupled with a first electrical spacer coupled in a space between and coupled with the first substrate and the second substrate and a second die may be coupled with a second electrical spacer coupled in a space between and coupled with the first substrate and the second substrate.