公开(公告)号：US08809968B2

公开(公告)日：2014-08-19

申请号：US13888400

申请日：2013-05-07

申请人： Forschungsverbund Berlin E.V.

发明人： Oliver Hilt ,  Rimma Zhytnytska ,  Hans-Joachim Würfl

IPC分类号： H01L29/02

CPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/861

摘要： This invention relates to a semiconductor layer structure. The semiconductor layer structure described includes a substrate and a buffer layer deposited onto the substrate. The semiconductor layer structure is characterized in that a drain voltage threshold lower than the breakdown voltage threshold is determined by isolating ions that are selectively implanted in just one region of the substrate into the substrate, wherein charge can dissipate from the one contact through the buffer layer towards a substrate region without isolating ions, if the one potential deviates from the other at least by the drain voltage threshold, and wherein the substrate region without isolating ions is located underneath the one contact. The semiconductor layer structure described allows dissipation of currents induced by induction in blocking active structures without damaging the active structures.

摘要翻译： 本发明涉及半导体层结构。 所述的半导体层结构包括衬底和沉积在衬底上的缓冲层。 半导体层结构的特征在于，通过将选择性地植入衬底的一个区域中的离子分离到衬底中来确定低于击穿电压阈值的漏极电压阈值，其中电荷可以通过缓冲层从一个触点消散 如果一个电位至少与漏极电压阈值相离，则衬底区域不隔离离子，并且其中不隔离离子的衬底区域位于一个触点下方。 所描述的半导体层结构允许在阻挡有源结构的情况下感应诱导的电流的耗散而不损坏有源结构。

公开(公告)号：US11127863B2

公开(公告)日：2021-09-21

申请号：US16462650

申请日：2017-11-20

申请人： FORSCHUNGSVERBUND BERLIN E.V.

发明人： Konstantin Osipov ,  Richard Lossy ,  Hans-Joachim Würfl

IPC分类号： H01L29/812 ,  H01L29/66

摘要： This invention concerns a gate structure and a process for its manufacturing. In particular, the present invention concerns the gate structuring of a field effect transistor with reduced thermo-mechanical stress and increased reliability (lower electromigration or diffusion of the gate metal). The gate structure according to the invention comprises a substrate; an active layer disposed on the substrate; an intermediate layer disposed on the active layer, the intermediate layer-having a recess extending through the entire intermediate layer towards the active layer; and a contact element which is arranged within the recess, the contact element completely filling the recess and extending to above the intermediate layer, the contact element resting at least in sections directly on the intermediate layer; the contact element being made of a Schottky metal and the contact element having an interior cavity completely enclosed by the Schottky metal.