利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

3 条记录 (耗时 0.02 秒)

    Methodology for recovery of hot carrier induced degradation in bipolar devices
    1.
    发明申请
    Methodology for recovery of hot carrier induced degradation in bipolar devices 有权
    双极器件热载流子诱导退化的回收方法

    公开(公告)号：US20060118912A1

    公开(公告)日：2006-06-08

    申请号：US10904985

    申请日：2004-12-08

    申请人： Fernando Guarin ,  J. Hostetter ,  Stewart Rauch ,  Ping-Chuan Wang ,  Zhijian Yang

    发明人： Fernando Guarin ,  J. Hostetter ,  Stewart Rauch ,  Ping-Chuan Wang ,  Zhijian Yang

    IPC分类号： H01L29/70 ,  H01L21/8222

    CPC分类号： H01L29/7304 ,  H01L29/7378

    摘要： A method for recovery of degradation caused by avalanche hot carriers is provided that includes subjecting an idle bipolar transistor exhibiting avalanche degradation to a thermal anneal step which increases temperature of the transistor thereby recovering the avalanche degradation of the bipolar transistor. In one embodiment, the annealing source is a self-heating structure that is a Si-containing resistor that is located side by side with an emitter of the bipolar transistor. During the recovering step, the bipolar transistor including the self-heating structure is placed in the idle mode (i.e., without bias) and a current from a separate circuit is flown through the self-heating structure. In another embodiment of the present, the annealing step is a result of providing a high forward current (around the peak fT current or greater) to the bipolar transistor while operating below the avalanche condition (V″CB of less than 1 V). Under the above conditions, about 40% or greater of the degradation can be recovered. In yet another embodiment of the present invention, the thermal annealing step may include a rapid thermal anneal (RTA), a furnace anneal, a laser anneal or a spike anneal.

    摘要翻译： 提供了一种用于回收由雪崩热载体引起的降解的方法，其包括使表现出雪崩降解的空闲双极晶体管经历热退火步骤，所述热退火步骤增加了晶体管的温度，从而恢复了双极晶体管的雪崩劣化。 在一个实施例中，退火源是自发热结构，其是与双极晶体管的发射极并排放置的含Si电阻器。 在恢复步骤期间，包括自发热结构的双极晶体管被置于空闲模式（即，没有偏压），并且来自单独电路的电流流过自热结构。 在本发明的另一个实施例中，退火步骤是在低于雪崩状况（V“CB”）的情况下向双极晶体管提供高正向电流（围绕峰值fT电流或更大）的结果， 小于1V）。 在上述条件下，可以回收约40％以上的降解。 在本发明的又一实施例中，热退火步骤可以包括快速热退火（RTA），炉退火，激光退火或尖峰退火。

    METHODOLOGY FOR RECOVERY OF HOT CARRIER INDUCED DEGRADATION IN BIPOLAR DEVICES
    2.
    发明申请
    METHODOLOGY FOR RECOVERY OF HOT CARRIER INDUCED DEGRADATION IN BIPOLAR DEVICES 有权
    在双极器件中恢复热载体诱导降解的方法

    公开(公告)号：US20070205434A1

    公开(公告)日：2007-09-06

    申请号：US11744621

    申请日：2007-05-04

    申请人： Fernando Guarin ,  J. Hostetter ,  Stewart Rauch ,  Ping-Chuan Wang ,  Zhijian Yang

    发明人： Fernando Guarin ,  J. Hostetter ,  Stewart Rauch ,  Ping-Chuan Wang ,  Zhijian Yang

    IPC分类号： H01L29/70 ,  H01L21/8222

    CPC分类号： H01L29/7304 ,  H01L29/7378

    摘要： A method for recovery of degradation caused by avalanche hot carriers is provided that includes subjecting an idle bipolar transistor exhibiting avalanche degradation to a thermal anneal step which increases temperature of the transistor thereby recovering the avalanche degradation of the bipolar transistor. In one embodiment, the annealing source is a self-heating structure that is a Si-containing resistor that is located side by side with an emitter of the bipolar transistor. During the recovering step, the bipolar transistor including the self-heating structure is placed in the idle mode (i.e., without bias) and a current from a separate circuit is flown through the self-heating structure. In another embodiment of the present, the annealing step is a result of providing a high forward current (around the peak fT current or greater) to the bipolar transistor while operating below the avalanche condition (VCB of less than 1 V). Under the above conditions, about 40% or greater of the degradation can be recovered. In yet another embodiment of the present invention, the thermal annealing step may include a rapid thermal anneal (RTA), a furnace anneal, a laser anneal or a spike anneal.

    摘要翻译： 提供了一种用于回收由雪崩热载体引起的降解的方法，其包括使表现出雪崩降解的空闲双极晶体管经历热退火步骤，所述热退火步骤增加了晶体管的温度，从而恢复了双极晶体管的雪崩劣化。 在一个实施例中，退火源是自发热结构，其是与双极晶体管的发射极并排放置的含Si电阻器。 在恢复步骤期间，包括自发热结构的双极晶体管被置于空闲模式（即，没有偏压），并且来自单独电路的电流流过自热结构。 在本发明的另一个实施例中，退火步骤是在双极晶体管的周围提供高正向电流（围绕峰值fT电流或更大）的结果，同时在低于雪崩条件（V CB）的情况下运行 超过1 V）。 在上述条件下，可以回收约40％以上的降解。 在本发明的又一实施例中，热退火步骤可以包括快速热退火（RTA），炉退火，激光退火或尖峰退火。