High density beam-accessed memory with reference target
    1.
    发明授权
    High density beam-accessed memory with reference target 失效
    具有参考目标的高密度光束存取存储器

    公开(公告)号:US4123798A

    公开(公告)日:1978-10-31

    申请号:US857314

    申请日:1977-12-05

    CPC classification number: G11C11/23

    Abstract: This invention relates to apparatus and methods for providing a high-density memory for electrical data and more particularly, to such a memory wherein data are represented by patterns of charge written and read by electron beam means at addressed locations.

    Abstract translation: 本发明涉及用于提供用于电数据的高密度存储器的装置和方法,更具体地说,涉及这样一种存储器,其中数据由在寻址位置处由电子束装置写入和读取的电荷模式表示。

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