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1.发明授权Method for making silicon nitride-bonded silicon carbide semiconductors and resulting bodies and articles using same 失效制造氮化硅结合的碳化硅半导体及使用其的所得物体和制品的方法
公开(公告)号：US3052814A
公开(公告)日：1962-09-04
申请号：US80123859
申请日：1959-03-23
Applicant: GEN MOTORS CORP
Inventor： EDWARDS WILLIAM R , KARL SCHWARTZWALDER
IPC: B60T8/26 , C04B35/565 , C04B35/591 , H01B1/04 , H01T13/38 , H01T13/41
CPC classification number: C04B35/632 , B60T8/26 , C04B35/565 , C04B35/591 , H01B1/04 , H01T13/38 , H01T13/41
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