Photodiode array for imaging applications
    1.
    发明授权
    Photodiode array for imaging applications 有权
    用于成像应用的光电二极管阵列

    公开(公告)号:US09337233B1

    公开(公告)日:2016-05-10

    申请号:US14570089

    申请日:2014-12-15

    CPC classification number: H01L27/14663 H01L27/14643 H01L27/14661

    Abstract: Embodiments of a photodiode array are provided herein. In some embodiments, a photodiode array may include a semiconductor layer configured to convert photons into analog electrical signals; and a passive layer having a first surface and a second surface disposed opposite the first surface, wherein the semiconductor layer is coupled to the first surface, and wherein the passive layer is configured to have a signal receiving component coupled directly to the second surface of the passive layer.

    Abstract translation: 本文提供了光电二极管阵列的实施例。 在一些实施例中,光电二极管阵列可以包括配置成将光子转换成模拟电信号的半导体层; 以及无源层,其具有与所述第一表面相对设置的第一表面和第二表面,其中所述半导体层耦合到所述第一表面,并且其中所述无源层被配置为具有直接耦合到所述第一表面的所述第二表面的信号接收部件 被动层。

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