公开(公告)号：US11979041B2

公开(公告)日：2024-05-07

申请号：US17129857

申请日：2020-12-21

Applicant: GLF INTEGRATED POWER INC., a Delaware corporation

Inventor： Ni Sun ,  Stephen W Bryson

IPC: H02J7/00 ,  H02H7/18

CPC classification number: H02J7/00304 ,  H02H7/18 ,  H02J7/0031

Abstract: A fully integrated circuit configuration that can be utilized to prevent abnormal discharge or overcharge in ultra-portable electronic systems is described. This battery protection integrated circuit can be enhanced by the addition of traditional battery protection schemes such as current limiting, overcurrent clamping, under voltage lock out and over voltage protection. This battery protection scheme utilizes a high side switch approach utilizing an ultra-low leakage PMOS power switch rather than the traditional low side NMOS switching.

公开(公告)号：US20240291298A1

公开(公告)日：2024-08-29

申请号：US18657764

申请日：2024-05-07

Applicant: GLF INTEGRATED POWER INC., a Delaware corporation

Inventor： Ni Sun ,  Stephen W Bryson

IPC: H02J7/00 ,  H01M10/44

CPC classification number: H02J7/00306 ,  H01M10/44 ,  H02J7/00302 ,  H02J7/00304 ,  H02J7/00309 ,  H02J7/0034 ,  H02J7/0063 ,  H02J7/0069

Abstract: A fully integrated circuit configuration that can be utilized to prevent abnormal overdischarge and overcharge in ultra-portable electronic systems is described. This battery protection integrated circuit can be enhanced by the addition of traditional battery protection schemes such as current limiting, overcurrent clamping, under voltage lock out and over voltage protection. This battery protection scheme utilizes a high side switch approach utilizing an ultra-low leakage PMOS power switch rather than the traditional low side NMOS switching.