公开(公告)号：US10438902B2

公开(公告)日：2019-10-08

申请号：US15698027

申请日：2017-09-07

Applicant: GLOBALFOUNDRIES INC.

Inventor： Vincent J. McGahay ,  Nicholas A. Polomoff ,  Shaoning Yao ,  Anupam Arora

IPC: H01L23/00 ,  H01L23/62 ,  H01L23/66

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to arc resistant crackstop structures and methods of manufacture. The structure includes: a crackstop structure comprising dual rails surrounding an active area of an integrated circuit; and a through-BOx electrical contact electrically connecting each of the dual rails to an underlying substrate.