Integrated circuit performance modeling using a connectivity-based condensed resistance model for a conductive structure in an integrated circuit

    公开(公告)号:US10031989B2

    公开(公告)日:2018-07-24

    申请号:US14546065

    申请日:2014-11-18

    Abstract: Disclosed are a system and a method for integrated circuit (IC) performance modeling, wherein a design layout of an IC is analyzed to identify a first conductive shape (e.g., an internal local interconnect or contact bar shape) on a diffusion boundary shape of a semiconductor device and to also identify the first conductive shape's connectivity to any second conductive shapes (e.g., a via, via bar, or external local interconnect shapes) inside and/or outside the limits of the diffusion boundary shape. A condensed resistance model for the first conductive shape is selected from a model library based on the previously identified connectivity. The selected condensed resistance model will have a lesser number of nodes and/or resistive elements than a full resistance model for the conductive shape. The selected condensed resistance model is used to construct a condensed netlist, which is used in a combined netlist to simulate IC performance.

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