公开(公告)号：US10707207B1

公开(公告)日：2020-07-07

申请号：US16277496

申请日：2019-02-15

Applicant: GLOBALFOUNDRIES INC.

Inventor： Hui Zang ,  Dali Shao

IPC: H01L21/20 ,  H01L29/94 ,  H01L27/088 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/762

Abstract: A semiconductor device, comprising first and second sets of fins; first and second gate electrodes; first and second isolation structures each separating one of the gate electrodes into a first portion and a second portion; and first and second conductive structures wider than the corresponding isolation structure and disposed on an entirety of a top of the corresponding isolation structure and on a part of the top of each of the first and second portions of the corresponding gate electrode. A method for making the semiconductor device. A system configured to implement the method and manufacture the semiconductor device. The semiconductor device may have a low parasitic capacitance and high chip performance.