公开(公告)号：US09343407B2

公开(公告)日：2016-05-17

申请号：US14664036

申请日：2015-03-20

Applicant: GLOBALFOUNDRIES INC.

Inventor： Fenton Read McFeely ,  Chih-Chao Yang

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528

CPC classification number: H01L23/53238 ,  H01L21/76846 ,  H01L21/76882 ,  H01L23/5226 ,  H01L23/528 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Techniques formation of high purity copper (Cu)-filled lines and vias are provided. In one aspect, a method of fabricating lines and vias filled with high purity copper with is provided. The method includes the following steps. A via is etched in a dielectric. The via is lined with a diffusion barrier. A thin ruthenium (Ru) layer is conformally deposited onto the diffusion barrier. A Cu layer is deposited on the Ru layer by a sputtering process. A reflow anneal is performed to eliminate voids in the lines and vias.