公开(公告)号：US10643927B1

公开(公告)日：2020-05-05

申请号：US16192999

申请日：2018-11-16

Applicant: GLOBALFOUNDRIES INC.

Inventor： Steven Shank ,  Ian McCallum-Cook ,  John Hall

IPC: H01L23/48 ,  H01L29/06 ,  H01L23/66 ,  H01L21/768 ,  H01L21/764

Abstract: Through-substrate vias (TSVs) extend through a high resistivity semiconductor substrate laterally spaced and isolated from an active device formed over the substrate by deep trench isolation (DTI) structures. The deep trench isolation structures may extend partially or entirely through the substrate, and may include an air gap. The deep trench isolation structures entirely surround the active device and the TSVs.