公开(公告)号：US20190074253A1

公开(公告)日：2019-03-07

申请号：US15698027

申请日：2017-09-07

Applicant: GLOBALFOUNDRIES INC.

Inventor： Vincent J. MCGAHAY ,  Nicholas A. POLOMOFF ,  Shaoning YAO ,  Anupam ARORA

IPC: H01L23/00 ,  H01L23/62 ,  H01L23/66

CPC classification number: H01L23/562 ,  H01L23/585 ,  H01L23/62 ,  H01L23/66 ,  H01L2223/6605

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to arc resistant crackstop structures and methods of manufacture. The structure includes: a crackstop structure comprising dual rails surrounding an active area of an integrated circuit; and a through-BOx electrical contact electrically connecting each of the dual rails to an underlying substrate.