公开(公告)号：US20190393209A1

公开(公告)日：2019-12-26

申请号：US16018549

申请日：2018-06-26

Applicant: GLOBALFOUNDRIES INC.

Inventor： Souvick MITRA ,  Mickey YU ,  Alain F. LOISEAU ,  You LI ,  Robert J. GAUTHIER, JR. ,  Tsung-Che TSAI

IPC: H01L27/02 ,  H01L23/60 ,  H01L27/092 ,  H01L21/8238

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge structures with reduced capacitance and methods of manufacture. The structure includes: a plurality of fin structures provided in at least one N+ type region and at least one P+ region; and a plurality of gate structures disposed over the plurality of fin structures and within the at least one N+ type region and one P+ region, the plurality of gate structures being separated in a lengthwise direction between the at least one N+ type region and the least one P+ region.

公开(公告)号：US20200021109A1

公开(公告)日：2020-01-16

申请号：US16033731

申请日：2018-07-12

Applicant: GLOBALFOUNDRIES INC.

Inventor： You LI ,  Alain F. LOISEAU ,  Souvick MITRA ,  Tsung-Che TSAI ,  Mickey YU ,  Robert J. GAUTHIER, JR.

IPC: H02H9/04 ,  H01L27/02 ,  H02H1/00

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to electrostatic discharge clamp structures and methods of manufacture. The structure includes: a network of clamps; sense elements in series with the clamps and configured to sense a turn-on of at least one clamp of the network of clamps; and feedback elements connected to the clamps to facilitate triggering of remaining clamps of the network of clamps.

公开(公告)号：US20160111414A1

公开(公告)日：2016-04-21

申请号：US14977737

申请日：2015-12-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： James P. DI SARRO ,  Robert J. GAUTHIER ,  Tom C. LEE ,  Junjun LI ,  Souvick MITRA ,  Christopher S. PUTNAM

IPC: H01L27/02 ,  H01L29/06 ,  H01L29/74

CPC classification number: H01L27/0262 ,  G06F17/5063 ,  G06F17/5072 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/66121 ,  H01L29/66393 ,  H01L29/7408 ,  H01L29/7412 ,  H01L29/742 ,  H01L29/7436 ,  H01L29/861

Abstract: An electrostatic discharge protection circuit is disclosed. A method of manufacturing a semiconductor structure includes forming a semiconductor controlled rectifier including a first plurality of fingers between an n-well body contact and an anode in an n-well, and a second plurality of fingers between a p-well body contact and a cathode in a p-well.