公开(公告)号：US10236768B2

公开(公告)日：2019-03-19

申请号：US15599596

申请日：2017-05-19

Applicant: GLOBALFOUNDRIES INC.

Inventor： Wern Ming Koe

IPC: G05F1/10 ,  G05F3/02 ,  H02M3/07 ,  H03K5/1532

Abstract: The present disclosure relates to a structure which includes a diode-based Dickson charge pump which is configured to use an independent multi-gate device to reduce a threshold voltage of a plurality of transistor diodes during a charging and pumping phase.

公开(公告)号：US10109620B1

公开(公告)日：2018-10-23

申请号：US15660577

申请日：2017-07-26

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Wern Ming Koe

IPC: H01L27/02 ,  H01L27/12

Abstract: Switched-capacitor charge pump implemented in FDSOI process technology and a method of forming them are provided. Embodiments include providing a FDSOI substrate; providing a plurality of stages of a first and a second pair of an NFET and PFET over the FDSOI substrate coupled between an input terminal and an output terminal, the first and second pair of each stage being opposite each other; providing a plurality of a first and a second capacitor over the FDSOI substrate, each first and second capacitor connected to a first and a second pair of NFET and PFET of a stage, respectively; connecting a back-gate of a NFET and a back-gate of a PFET of each pair; connecting the connected NFET and PFET back-gates to a front-gate of the pair; and connecting a source of each pair to a front gate of an opposite pair within the stage.