公开(公告)号：US10014364B1

公开(公告)日：2018-07-03

申请号：US15460914

申请日：2017-03-16

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Qun Gao ,  Anthony Chou ,  Stephen Furkay ,  Naved Siddiqui

IPC: H01L49/02 ,  H01L21/3213 ,  H01L27/06 ,  H01L35/14 ,  H01L35/32

CPC classification number: H01L28/24 ,  H01L35/14 ,  H01L35/32

Abstract: Device structures and fabrication methods for an on-chip resistor. A first Seebeck terminal is arranged to overlap with first and second resistor bodies of the on-chip resistor. A second Seebeck terminal is also arranged to overlap with the first and second resistor bodies. The second Seebeck terminal has a spaced relationship with the first Seebeck terminal along a length of the first and second resistor bodies. The temperature coefficient of resistance of the on-chip resistor is based at least in part on a Seebeck coefficient of first and second Seebeck terminals.