公开(公告)号：US09087716B2

公开(公告)日：2015-07-21

申请号：US13942034

申请日：2013-07-15

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ran Yan ,  Joerg Schoenekess ,  Jan Hoentschel

IPC: H01L21/8238 ,  H01L27/088 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/84 ,  H01L27/092

CPC classification number: H01L27/088 ,  H01L21/823412 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/092 ,  H01L29/66477

Abstract: The present disclosure provides an improved method for forming a thin semiconductor alloy layer on top of a semiconductor layer. The proposed method relies on an implantation of appropriate impurity species before performing deposition of the semiconductor alloy film. The implanted species cause the semiconductor alloy layer to be less unstable to wet and dry etches performed on the device surface after deposition. Thus, the thickness uniformity of the semiconductor alloy film may be substantially increased if the film is deposited after performing the implantation. On the other hand, some implanted impurities have been found to decrease the growth rate of the semiconductor alloy layer. Thus, by selectively implanting appropriate impurities in predetermined portions of a wafer, a single deposition step may be used in order to form a semiconductor alloy layer with a thickness which may be locally adjusted at will.

Abstract translation: 本公开提供了一种用于在半导体层的顶部上形成薄半导体合金层的改进方法。 所提出的方法依赖于在进行半导体合金膜的沉积之前植入适当的杂质物质。 植入的物质导致半导体合金层在沉积后在器件表面上进行的湿法干蚀刻不太稳定。 因此，如果在进行植入之后沉积膜，则半导体合金膜的厚度均匀性可以显着增加。 另一方面，已经发现一些植入的杂质降低了半导体合金层的生长速率。 因此，通过在晶片的预定部分中选择性地注入适当的杂质，可以使用单个沉积步骤以形成具有可以随意局部调整的厚度的半导体合金层。

公开(公告)号：US20150014777A1

公开(公告)日：2015-01-15

申请号：US13942034

申请日：2013-07-15

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ran Yan ,  Joerg Schoenekess ,  Jan Hoentschel

IPC: H01L27/088 ,  H01L29/66

CPC classification number: H01L27/088 ,  H01L21/823412 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/092 ,  H01L29/66477

Abstract: The present disclosure provides an improved method for forming a thin semiconductor alloy layer on top of a semiconductor layer. The proposed method relies on an implantation of appropriate impurity species before performing deposition of the semiconductor alloy film. The implanted species cause the semiconductor alloy layer to be less unstable to wet and dry etches performed on the device surface after deposition. Thus, the thickness uniformity of the semiconductor alloy film may be substantially increased if the film is deposited after performing the implantation. On the other hand, some implanted impurities have been found to decrease the growth rate of the semiconductor alloy layer. Thus, by selectively implanting appropriate impurities in predetermined portions of a wafer, a single deposition step may be used in order to form a semiconductor alloy layer with a thickness which may be locally adjusted at will.

Abstract translation: 本公开提供了一种用于在半导体层的顶部上形成薄半导体合金层的改进方法。 所提出的方法依赖于在进行半导体合金膜的沉积之前植入适当的杂质物质。 植入的物质导致半导体合金层在沉积后在器件表面上进行的湿法干蚀刻不太稳定。 因此，如果在进行植入之后沉积膜，则半导体合金膜的厚度均匀性可以显着增加。 另一方面，已经发现一些植入的杂质降低了半导体合金层的生长速率。 因此，通过在晶片的预定部分选择性地注入合适的杂质，可以使用单个沉积步骤以形成可以随意地局部调整的厚度的半导体合金层。