公开(公告)号：US20190238105A1

公开(公告)日：2019-08-01

申请号：US15886475

申请日：2018-02-01

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Anthony Kendall STAMPER ,  Vibhor JAIN ,  Humberto CAMPANELLA PINEDA ,  John Joseph PEKARIK

IPC: H03F3/21 ,  H01L21/304 ,  H01L21/8238 ,  H01L21/02 ,  H01L21/762 ,  H01L27/02

Abstract: A method of forming a CMOS device and a GaN PA structure on a 100 Si substrate having a surface orientated in 111 direction and the resulting device are provided. Embodiments include forming a device with a protective layer over a portion of a Si substrate; forming a V-shaped groove in the Si substrate; forming a buffer layer, a GaN layer, an AlGaN layer and a passivation layer sequentially over the Si substrate; forming trenches through the passivation and the AlGaN layers; forming second trenches through the passivation layer; forming electrode structures over portions of the passivation layer and filling the first and second trenches; removing portions of the passivation layer, the AlGaN layer and the GaN layer outside of the V-shaped groove down to the buffer layer; forming a dielectric layer over the Si substrate; and forming vias through the dielectric layer down to electrode structures and the device.