公开(公告)号：US20160223896A1

公开(公告)日：2016-08-04

申请号：US14609588

申请日：2015-01-30

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Lei SUN ,  Obert Reeves WOOD, II

IPC: G03F1/22

CPC classification number: G03F1/22 ,  G03F1/24 ,  G03F1/58

Abstract: Methods for creating a EUV photolithography mask with a thinner highly EUV absorbing absorber layer and the resulting device are disclosed. Embodiments include forming a multilayer reflector (MLR); forming first and second layers of a first EUV absorbing material over the MLR, the second layer being between the first layer and the MLR; and implanting the first layer with particles of a second EUV absorbing material, wherein the first EUV absorbing material is etchable and has a lower EUV absorption coefficient than the second EUV absorbing material, and wherein the implanted particles are substantially separated from each other.

Abstract translation: 公开了用于制造具有较薄的高度EUV吸收层的EUV光刻掩模和所得到的器件的方法。 实施例包括形成多层反射器（MLR）; 在所述MLR上形成第一EUV吸收材料的第一层和第二层，所述第二层位于所述第一层和所述MLR之间; 以及用第二EUV吸收材料的颗粒注入所述第一层，其中所述第一EUV吸收材料是可蚀刻的并且具有比所述第二EUV吸收材料更低的EUV吸收系数，并且其中所述注入的颗粒彼此基本上分离。