公开(公告)号：US20170082423A1

公开(公告)日：2017-03-23

申请号：US14857914

申请日：2015-09-18

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Padraig TIMONEY ,  Alok VAID

IPC: G01B11/06 ,  G01N21/47 ,  H01L21/02 ,  H01L21/66 ,  H01L21/306

CPC classification number: G01B11/06 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methodologies and an apparatus for enabling three-dimensional scatterometry to be used to measure a thickness of dielectric layers in semiconductor devices are provided. Embodiments include initiating optical critical dimension (OCD) scatterometry on a three-dimensional test structure formed on a wafer, the three-dimensional test structure comprising patterned copper (Cu) trenches with an ultra-low k (ULK) dielectric film formed over the patterned Cu trenches; and obtaining, by a processor, a thickness of the ULK dielectric film based on results of the OCD scatterometry.

公开(公告)号：US20180135967A1

公开(公告)日：2018-05-17

申请号：US15870108

申请日：2018-01-12

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Padraig TIMONEY ,  Alok VAID

IPC: G01B11/06 ,  H01L21/66

CPC classification number: G01B11/06 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methodologies and an apparatus for enabling three-dimensional scatterometry to be used to measure a thickness of dielectric layers in semiconductor devices are provided. Embodiments include initiating optical critical dimension (OCD) scatterometry on a three-dimensional test structure formed on a wafer, the three-dimensional test structure comprising patterned copper (Cu) trenches with an ultra-low k (ULK) dielectric film formed over the patterned Cu trenches; and obtaining, by a processor, a thickness of the ULK dielectric film based on results of the OCD scatterometry.