公开(公告)号：US20190172832A1

公开(公告)日：2019-06-06

申请号：US15830671

申请日：2017-12-04

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ming-Cheng Chang ,  Nigel Chan ,  Ralf Van Bentum

IPC: H01L27/11 ,  H01L21/8238 ,  H01L29/423 ,  H01L27/092 ,  H01L27/02

Abstract: A method of forming a finFET SRAM and related device, are provided. Embodiments include forming a plurality of silicon fins in a substrate; and forming a gate over each of the fins, wherein all of the fins are diagonally skewed in a single direction relative to the gates, and all of the gates extend in a single direction relative to the respective fins.