公开(公告)号：US10014828B1

公开(公告)日：2018-07-03

申请号：US15659352

申请日：2017-07-25

Applicant: GLOBALFOUNDRIES Inc.

Inventor： See Lee ,  Abdellatif Bellaouar

IPC: H04B1/28 ,  H03F1/02 ,  H03F1/32 ,  H03F3/24 ,  H04W52/18 ,  H04L27/36

CPC classification number: H03F1/0255 ,  H03F1/0272 ,  H03F1/3205 ,  H03F3/24 ,  H03F3/245 ,  H03F3/50 ,  H03F2200/123 ,  H04L27/366 ,  H04W52/18

Abstract: Embodiments of the present disclosure provide a transmitter system including: a source follower (SF) sub-stage having a pair of transistors, one being coupled to a biasing voltage at a gate terminal thereof, and the other including a fully depleted semiconductor on insulator (FDSOI) transistor coupled to an input signal at a gate terminal thereof, and coupled to a calibration voltage at a back-gate terminal thereof. A mixer sub-stage includes a mixer input node coupled to the SF output node of the pair of transistors of the SF sub-stage, and the mixer input node is electrically coupled in parallel to two FDSOI mixer transistors, with the FDSOI mixer transistor being electrically coupled to a respective back-gate voltage. The FDSOI mixer transistors each include a gate terminal coupled to an input voltage, while a second source/drain terminal of the FDSOI mixer transistors are each electrically coupled to a mixer output node.