公开(公告)号：US10103070B2

公开(公告)日：2018-10-16

申请号：US14671265

申请日：2015-03-27

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Dongsuk Park ,  Wangkeun Cho ,  Wen Hua Cheng

IPC: H01L21/66 ,  G01B21/08 ,  G01B21/04

Abstract: Methods and processes for forming semiconductor devices with reduced yield loss and failed dies are provided. One method includes, for instance: obtaining a wafer after at least one fabrication processing; taking first r, θ, z measurements of the wafer after the at least one fabrication processing; performing at least one second fabrication processing; taking second r, θ, z measurements of the wafer after the at least one second fabrication processing; and analyzing the second r, θ, z measurements with respect to the first r, θ, z measurements. A process includes, for instance: obtaining a wafer with a substrate and at least one first device positioned on the substrate; taking first measurements in a r, θ, z coordinate system; forming at least one second device over the substrate; taking second measurements in the r, θ, z coordinate system; and analyzing the second measurements with respect to the first measurements.