公开(公告)号：US20210134987A1

公开(公告)日：2021-05-06

申请号：US16674432

申请日：2019-11-05

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Mankyu YANG ,  Jagar SINGH ,  Alexander MARTIN ,  John J. ELLIS-MONAGHAN

IPC: H01L29/735 ,  H01L29/417 ,  H01L29/06 ,  H01L29/737

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to gate controlled transistors and methods of manufacture. The structure includes: an emitter region; a collector region; base regions on opposing sides of the emitter region and the collector region; and a gate structure composed of a body region and leg regions, the body region being located between the base regions on opposing sides of the emitter region and the collector region, and the leg regions isolating the base regions from both the emitter region and the collector region.

公开(公告)号：US20210125922A1

公开(公告)日：2021-04-29

申请号：US16666808

申请日：2019-10-29

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Tung-Hsing LEE ,  Teng-Yin LIN ,  Frank W. MONT ,  Edward J. GORDON ,  Asmaa ELKADI ,  Alexander MARTIN ,  Won Suk LEE ,  Anvitha SHAMPUR

IPC: H01L23/522 ,  H01L49/02 ,  H01F27/28 ,  H01F27/24 ,  H01F41/04

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to dummy fill structures and methods of manufacture. The structure includes: a passive device formed in interlevel dielectric material; and a plurality of metal dummy fill structures composed of at least one main branch and two extending legs from at least one side of the main branch, the at least two extending legs being positioned and structured to suppress eddy currents of the passive device.