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公开(公告)号：US11502106B2
公开(公告)日：2022-11-15
申请号：US16788276
申请日：2020-02-11
Applicant: GLOBALFOUNDRIES U.S. INC.
Inventor： Benjamin Vito Fasano , Koushik Ramachandran , Ian Douglas Walter Melville , Sarah Huffsmith Knickerbocker , Jorge Lubguban
IPC: H01L29/78 , H01L27/12 , H01L29/06 , H01L21/762 , H01L29/161
Abstract: A semiconductor device is provided, which includes a multi-layered substrate having an interposed polymeric film and a device layer arranged over the multi-layered substrate.
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