公开(公告)号：US11217533B2

公开(公告)日：2022-01-04

申请号：US16784256

申请日：2020-02-07

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Steven Robert Soss ,  Steven John Bentley ,  Julien Frougier

IPC: H01L23/522 ,  H01L29/78 ,  H01L23/535 ,  H01L27/088 ,  H01L21/8234

Abstract: A semiconductor device is provided, the semiconductor device comprising a substrate and a first semiconductor fin and a second semiconductor fin disposed over the substrate. The first and second semiconductor fins each having an upper portion and a width. Epitaxial structures are disposed over the upper portions of the first and second semiconductor fins. The upper portions of the first and second semiconductor fins and the epitaxial structures provide an active layer. A metal structure is positioned between the active layer and the substrate. The metal structure extends at least across the widths of the first and second semiconductor fins and a separation distance between the fins. A first isolation material separates the metal structure from the active layer. A second isolation material separates the metal structure from the substrate. A contact electrically connects the metal structure to the epitaxial structures.