公开(公告)号：US20210280703A1

公开(公告)日：2021-09-09

申请号：US16807623

申请日：2020-03-03

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Bartlomiej J. Pawlak ,  Dimitri Lederer

IPC: H01L29/778 ,  H01L29/15 ,  H01L29/16 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66 ,  H01L21/02

Abstract: Structures including a buffer layer and methods of forming a structure including a buffer layer. A layer stack is formed on a semiconductor substrate. The layer stack includes a buffer layer and a charge-trapping layer. The buffer layer is composed of a III-V compound semiconductor material, and the charge-trapping layer is positioned between the semiconductor substrate and the buffer layer.