公开(公告)号：US11088075B2

公开(公告)日：2021-08-10

申请号：US16671414

申请日：2019-11-01

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Souvick Mitra ,  Rainer Thoma ,  Harsh Shah ,  Anindya Nath ,  Robert J. Gauthier, Jr.

IPC: H01L23/528 ,  H01L21/74 ,  H01L29/417 ,  H01L23/522

Abstract: Back-end-of-line layout structures and methods of forming a back-end-of-line layout structure. A metallization level includes a plurality of interconnects positioned over a plurality of active device regions. The plurality of interconnects have a triangular-shaped layout and a plurality of lengths within the triangular-shaped layout.

公开(公告)号：US20210134719A1

公开(公告)日：2021-05-06

申请号：US16671414

申请日：2019-11-01

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Souvick Mitra ,  Rainer Thoma ,  Harsh Shah ,  Anindya Nath ,  Robert J. Gauthier, JR.

IPC: H01L23/528 ,  H01L23/522 ,  H01L29/417 ,  H01L21/74

Abstract: Back-end-of-line layout structures and methods of forming a back-end-of-line layout structure. A metallization level includes a plurality of interconnects positioned over a plurality of active device regions. The plurality of interconnects have a triangular-shaped layout and a plurality of lengths within the triangular-shaped layout.